![]() Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation = 25☌ Derate above 25☌ Power Dissipation at Tc= 25☌ Derate above 25☌ Operating and Storage JunctionTemperature Range Thermal Resistance Junction to Case Junction to Ambient Rth (j-c) Rth (j-a) 83.3 200 ☌/W Symbol VCEO VCBO VEBO 1.5 12 Tj, Tstg +150 W W/☌ mA mW mW/☌ V UnitĬharacteristic Collector Emitter Voltage = 0 Collector Base Voltage = 0 Emitter Base Voltage = 0 Base Cut off Current VCE = 35V, VEB = 0.4V Collector Cut off Current VCE = 35V, VEB = 0.4V Collector Emitter Saturation Voltage = 50mA Base Emitter Saturation Voltage = 50mA *Pulse Test : Pulse Width: 300µs, Duty 2.0% Symbol BVCEO* BVCBO BVEBO IBEV 6 V UnitĬharacteristic DC Current Gain = 0.1mA, VCE = 1mA, VCE = 10mA, VCE = 150mA, VCE = 500mA, VCE = 2V* Dynamic Characteristics Small Signal Current Gain = 1mA, VCE = 1KHz Input Impedance = 1mA, VCE = 1KHz Voltage Feedback Ratio = 1mA, VCE = 1KHz Output Impedance = 1mA, VCE = 1KHz Collector-Base Capacitance VCB = 100KHz VCB = 140KHz Emitter-Base Capacitance VEB = 100kHz Transition Frequency = 20mA, VCE = 100MHz Switching Characteristics VCC = 30V, VEB = 15mA Delay Time Rise Time VCC = 15mA Storage time Fall Time *Pulse Test : Pulse Width: 300µs, Duty <20 ns hfe hie hre hoe Ccb Ceb fT MHz x10-4 µ Symbol 2N4401 Unit NPN Silicon Planar Epitaxial Transistors.
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